CSC1008Y BJT

CSC1008Y CSC1008Y

CSC1008Y BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSC1008Y
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.8 W
  • Maximum Collector-Base Voltage: 80 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 8 V
  • Maximum Collector Current: 0.7 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 30 MHz
  • Forward Current Transfer Ratio (hFE Value): 40
  • Collector Capacitance: 8 pF
  • Package: TO-92
  • Noise Figure: -