CSC1009G BJT

CSC1009G CSC1009G
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CSC1009G BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSC1009G
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.8 W
  • Maximum Collector-Base Voltage: 160 V
  • Maximum Collector-Emitter Voltage: 140 V
  • Maximum Emitter-Base Voltage: 8 V
  • Maximum Collector Current: 0.7 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 30 MHz
  • Forward Current Transfer Ratio (hFE Value): 200
  • Collector Capacitance: 8 pF
  • Package: TO-92
  • Noise Figure: -

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