CSC1009G BJT


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CSC1009G BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSC1009G
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.8 W
- Maximum Collector-Base Voltage: 160 V
- Maximum Collector-Emitter Voltage: 140 V
- Maximum Emitter-Base Voltage: 8 V
- Maximum Collector Current: 0.7 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 30 MHz
- Forward Current Transfer Ratio (hFE Value): 200
- Collector Capacitance: 8 pF
- Package: TO-92
- Noise Figure: -