CSC1162B BJT

CSC1162B CSC1162B
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CSC1162B BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSC1162B
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 10 W
  • Maximum Collector-Base Voltage: 35 V
  • Maximum Collector-Emitter Voltage: 35 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 2.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 180 MHz
  • Forward Current Transfer Ratio (hFE Value): 60
  • Package: TO-126
  • Noise Figure: -

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