CSC1162D BJT
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CSC1162D BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSC1162D
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 10 W
- Maximum Collector-Base Voltage: 35 V
- Maximum Collector-Emitter Voltage: 35 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 2.5 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 180 MHz
- Forward Current Transfer Ratio (hFE Value): 160
- Package: TO-126
- Noise Figure: -