CSC2229Y BJT


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CSC2229Y BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSC2229Y
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.625 W
- Maximum Collector-Base Voltage: 200 V
- Maximum Collector-Emitter Voltage: 150 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 0.5 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 120 MHz
- Forward Current Transfer Ratio (hFE Value): 120
- Collector Capacitance: 3.5 pF
- Package: TO-92
- Noise Figure: -