CSC2335 BJT
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CSC2335 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSC2335
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 40 W
- Maximum Collector-Base Voltage: 500 V
- Maximum Collector-Emitter Voltage: 400 V
- Maximum Emitter-Base Voltage: 7 V
- Maximum Collector Current: 7 A
- Maximum Operating Junction Temperature: 150 °C
- Forward Current Transfer Ratio (hFE Value): 20
- Package: TO-220
- Noise Figure: -