CSC3420 BJT


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CSC3420 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSC3420
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 10 W
- Maximum Collector-Base Voltage: 50 V
- Maximum Collector-Emitter Voltage: 20 V
- Maximum Emitter-Base Voltage: 8 V
- Maximum Collector Current: 5 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 100 MHz
- Forward Current Transfer Ratio (hFE Value): 140
- Collector Capacitance: 40 pF
- Package: TO-126
- Noise Figure: -