CSC4212 BJT

CSC4212 CSC4212
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CSC4212 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSC4212
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 5 W
  • Maximum Collector-Base Voltage: 350 V
  • Maximum Collector-Emitter Voltage: 300 V
  • Maximum Emitter-Base Voltage: 7.5 V
  • Maximum Collector Current: 0.2 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 50 MHz
  • Forward Current Transfer Ratio (hFE Value): 40
  • Collector Capacitance: 4.5 pF
  • Package: TO-126
  • Noise Figure: -

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