CSC458D BJT

CSC458D CSC458D

CSC458D BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSC458D
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.2 W
  • Maximum Collector-Base Voltage: 30 V
  • Maximum Collector-Emitter Voltage: 30 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.1 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 230 MHz
  • Forward Current Transfer Ratio (hFE Value): 250
  • Collector Capacitance: 3.5 pF
  • Package: TO-92
  • Noise Figure: -