CSC536KG BJT
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CSC536KG BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSC536KG
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.4 W
- Maximum Collector-Emitter Voltage: 50 V
- Maximum Collector Current: 0.1 A
- Transition Frequency: 100 MHz
- Forward Current Transfer Ratio (hFE Value): 280
- Package: TO-92
- Noise Figure: -