CSC945Q BJT


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CSC945Q BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSC945Q
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.25 W
- Maximum Collector-Base Voltage: 60 V
- Maximum Collector-Emitter Voltage: 45 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 0.1 A
- Maximum Operating Junction Temperature: 125 °C
- Transition Frequency: 150 MHz
- Forward Current Transfer Ratio (hFE Value): 50
- Collector Capacitance: 4 pF
- Package: TO-92
- Noise Figure: -