CSD1025 BJT

CSD1025 CSD1025

CSD1025 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSD1025
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 50 W
  • Maximum Collector-Base Voltage: 200 V
  • Maximum Collector-Emitter Voltage: 200 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 8 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 50 MHz
  • Forward Current Transfer Ratio (hFE Value): 1500
  • Package: TO-220
  • Noise Figure: -