CSD1047F BJT

CSD1047F CSD1047F
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CSD1047F BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSD1047F
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 90 W
  • Maximum Collector-Base Voltage: 160 V
  • Maximum Collector-Emitter Voltage: 140 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 12 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 15 MHz
  • Forward Current Transfer Ratio (hFE Value): 20
  • Collector Capacitance: 210 pF
  • Package: TO-3P
  • Noise Figure: -

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