CSD1047YF BJT
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CSD1047YF BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSD1047YF
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 90 W
- Maximum Collector-Base Voltage: 160 V
- Maximum Collector-Emitter Voltage: 140 V
- Maximum Emitter-Base Voltage: 6 V
- Maximum Collector Current: 12 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 15 MHz
- Forward Current Transfer Ratio (hFE Value): 100
- Collector Capacitance: 210 pF
- Package: TO-3P
- Noise Figure: -