CSD1133 BJT

CSD1133 CSD1133
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CSD1133 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSD1133
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 40 W
  • Maximum Collector-Base Voltage: 70 V
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 4 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 7 MHz
  • Forward Current Transfer Ratio (hFE Value): 60
  • Package: TO-220
  • Noise Figure: -

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