CSD1168P BJT

CSD1168P CSD1168P
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CSD1168P BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSD1168P
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 50 W
  • Maximum Collector-Emitter Voltage: 800 V
  • Maximum Collector Current: 5 A
  • Forward Current Transfer Ratio (hFE Value): 9
  • Package: TO-3
  • Noise Figure: -

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