CSD1168Q BJT


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CSD1168Q BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSD1168Q
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 50 W
- Maximum Collector-Emitter Voltage: 800 V
- Maximum Collector Current: 5 A
- Forward Current Transfer Ratio (hFE Value): 15
- Package: TO-3
- Noise Figure: -