CSD1616L BJT


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CSD1616L BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSD1616L
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.75 W
- Maximum Collector-Base Voltage: 60 V
- Maximum Collector-Emitter Voltage: 50 V
- Maximum Emitter-Base Voltage: 6 V
- Maximum Collector Current: 1 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 100 MHz
- Forward Current Transfer Ratio (hFE Value): 300
- Collector Capacitance: 19 pF
- Package: TO-92
- Noise Figure: -