CSD1638 BJT

CSD1638 CSD1638
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CSD1638 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSD1638
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 1.2 W
  • Maximum Collector-Base Voltage: 100 V
  • Maximum Collector-Emitter Voltage: 100 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 2 A
  • Maximum Operating Junction Temperature: 150 °C
  • Forward Current Transfer Ratio (hFE Value): 1000
  • Collector Capacitance: 25 pF
  • Package: TO-126
  • Noise Figure: -

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