CSD363R BJT

CSD363R CSD363R
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CSD363R BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSD363R
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 40 W
  • Maximum Collector-Base Voltage: 300 V
  • Maximum Collector-Emitter Voltage: 120 V
  • Maximum Emitter-Base Voltage: 8 V
  • Maximum Collector Current: 6 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 10 MHz
  • Forward Current Transfer Ratio (hFE Value): 40
  • Package: TO-220
  • Noise Figure: -

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