CSD545E BJT

CSD545E CSD545E

CSD545E BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSD545E
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.6 W
  • Maximum Collector-Base Voltage: 25 V
  • Maximum Collector-Emitter Voltage: 25 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 1 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 180 MHz
  • Forward Current Transfer Ratio (hFE Value): 100
  • Collector Capacitance: 15 pF
  • Package: TO-92
  • Noise Figure: -