CSD600E BJT
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CSD600E BJT Datasheet
- Type of Transistor: BJT
- Type Designator: CSD600E
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 8 W
- Maximum Collector-Emitter Voltage: 100 V
- Maximum Collector Current: 1 A
- Transition Frequency: 130 MHz
- Forward Current Transfer Ratio (hFE Value): 100
- Package: TO-126
- Noise Figure: -