CSD611 BJT

CSD611 CSD611
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CSD611 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSD611
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 2 W
  • Maximum Collector-Base Voltage: 110 V
  • Maximum Collector-Emitter Voltage: 110 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 6 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 40 MHz
  • Forward Current Transfer Ratio (hFE Value): 2000
  • Collector Capacitance: 55 pF
  • Package: TO-220
  • Noise Figure: -

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