CSD669B BJT

CSD669B CSD669B
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CSD669B BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSD669B
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 20 W
  • Maximum Collector-Base Voltage: 180 V
  • Maximum Collector-Emitter Voltage: 120 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 1.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 140 MHz
  • Forward Current Transfer Ratio (hFE Value): 60
  • Collector Capacitance: 14 pF
  • Package: TO-126
  • Noise Figure: -

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