CSD882Q BJT

CSD882Q CSD882Q
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CSD882Q BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: CSD882Q
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 10 W
  • Maximum Collector-Base Voltage: 40 V
  • Maximum Collector-Emitter Voltage: 30 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 3 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 90 MHz
  • Forward Current Transfer Ratio (hFE Value): 100
  • Collector Capacitance: 45 pF
  • Package: TO-126
  • Noise Figure: -

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