D6 BJT
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D6 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: D6
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.15 W
- Maximum Collector-Base Voltage: 30 V
- Maximum Collector-Emitter Voltage: 25 V
- Maximum Collector Current: 0.03 A
- Maximum Operating Junction Temperature: 175 °C
- Transition Frequency: 200 MHz
- Forward Current Transfer Ratio (hFE Value): 200
- Package: isolated E72873 5 2 1 8 7 9 4 3 10/11 6 Features / Advantages
- Noise Figure: -<div id="content2"><p> <a href=https