F2 BJT
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F2 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: F2
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 0.15 W
- Maximum Collector-Base Voltage: 50 V
- Maximum Collector-Emitter Voltage: 25 V
- Maximum Collector Current: 0.05 A
- Maximum Operating Junction Temperature: 125 °C
- Transition Frequency: 250 MHz
- Forward Current Transfer Ratio (hFE Value): 40
- Collector Capacitance: 2.5 pF
- Noise Figure: -<div id="content2"><p> <a href=https