GT40 BJT

GT40 GT40
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GT40 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: GT40
  • Material of Transistor: Ge
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.1 W
  • Maximum Collector-Base Voltage: 9 V
  • Maximum Collector-Emitter Voltage: 9 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 0.1 A
  • Maximum Operating Junction Temperature: 75 °C
  • Transition Frequency: 1 MHz
  • Forward Current Transfer Ratio (hFE Value): 15
  • Collector Capacitance: 15 pF
  • Package: R145
  • Noise Figure: -

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