KF125 BJT

KF125

KF125 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: KF125
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.22 W
  • Maximum Collector-Base Voltage: 30 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.03 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 170 MHz
  • Forward Current Transfer Ratio (hFE Value): 37
  • Package: X09
  • Noise Figure: -