KF507 BJT

KF507

KF507 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: KF507
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.8 W
  • Maximum Collector-Base Voltage: 40 V
  • Maximum Collector-Emitter Voltage: 32 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 100 MHz
  • Forward Current Transfer Ratio (hFE Value): 35
  • Package: TO5
  • Noise Figure: -

Top KF507 Equivalent Transistors