KF517 BJT

KF517

KF517 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: KF517
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.8 W
  • Maximum Collector-Base Voltage: 40 V
  • Maximum Collector-Emitter Voltage: 30 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.6 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 30 MHz
  • Forward Current Transfer Ratio (hFE Value): 35
  • Package: TO5
  • Noise Figure: -

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