KF630D BJT
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KF630D BJT Datasheet
- Type of Transistor: BJT
- Type Designator: KF630D
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 5 W
- Maximum Collector-Base Voltage: 36 V
- Maximum Collector-Emitter Voltage: 25 V
- Maximum Emitter-Base Voltage: 3 V
- Maximum Collector Current: 0.4 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 160 MHz
- Forward Current Transfer Ratio (hFE Value): 30
- Package: TO5
- Noise Figure: -