KF630S BJT

KF630S
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KF630S BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: KF630S
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 5 W
  • Maximum Collector-Base Voltage: 30 V
  • Maximum Collector-Emitter Voltage: 25 V
  • Maximum Emitter-Base Voltage: 3 V
  • Maximum Collector Current: 0.4 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 240 MHz
  • Forward Current Transfer Ratio (hFE Value): 30
  • Package: TO39A-1
  • Noise Figure: -

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