KSS1C200LT1G BJT

KSS1C200LT1G KSS1C200LT1G

KSS1C200LT1G BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: KSS1C200LT1G
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.49 W
  • SMD Transistor Code: VL*
  • Maximum Collector-Base Voltage: 140 V
  • Maximum Collector-Emitter Voltage: 100 V
  • Maximum Emitter-Base Voltage: 7 V
  • Maximum Collector Current: 2 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 120 MHz
  • Forward Current Transfer Ratio (hFE Value): 120
  • Collector Capacitance: 200 pF
  • Package: SOT-23
  • Noise Figure: -

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