M1 BJT

M1 M1
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M1 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: M1
  • Material of Transistor: Ge
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.1 W
  • Maximum Collector-Base Voltage: 25 V
  • Maximum Collector Current: 0.012 A
  • Maximum Operating Junction Temperature: 75 °C
  • Forward Current Transfer Ratio (hFE Value): 20
  • Collector Capacitance: 1.4 pF
  • Package: CAN
  • Noise Figure: -