MZT3055 BJT


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MZT3055 BJT Datasheet
- Type of Transistor: BJT
- Type Designator: MZT3055
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 6 W
- Maximum Collector-Base Voltage: 70 V
- Maximum Collector-Emitter Voltage: 60 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 2 A
- Maximum Operating Junction Temperature: 150 °C
- Transition Frequency: 2 MHz
- Forward Current Transfer Ratio (hFE Value): 20
- Package: SOT-223
- Noise Figure: -