PH1090-175L BJT

PH1090-175L PH1090-175L

PH1090-175L BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: PH1090-175L
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 375 W
  • Maximum Collector-Emitter Voltage: 80 V
  • Maximum Emitter-Base Voltage: 3 V
  • Maximum Collector Current: 10.5 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency: 1090 MHz
  • Forward Current Transfer Ratio (hFE Value): 8.3
  • Package: CERAMIC
  • Noise Figure: -