PH1113-100 BJT

PH1113-100 PH1113-100

PH1113-100 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: PH1113-100
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 350 W
  • Maximum Collector-Emitter Voltage: 70 V
  • Maximum Emitter-Base Voltage: 3 V
  • Maximum Collector Current: 9 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency: 1300 MHz
  • Forward Current Transfer Ratio (hFE Value): 8
  • Package: CERAMIC
  • Noise Figure: -