PH1214-100EL BJT

PH1214-100EL PH1214-100EL

PH1214-100EL BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: PH1214-100EL
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 250 W
  • Maximum Collector-Emitter Voltage: 75 V
  • Maximum Emitter-Base Voltage: 3 V
  • Maximum Collector Current: 14.1 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency: 1400 MHz
  • Forward Current Transfer Ratio (hFE Value): 6
  • Package: CERAMIC
  • Noise Figure: -