PH3134-10M BJT

PH3134-10M PH3134-10M

PH3134-10M BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: PH3134-10M
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 70 W
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 3 V
  • Maximum Collector Current: 1.2 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency: 3400 MHz
  • Forward Current Transfer Ratio (hFE Value): 8
  • Package: CERAMIC
  • Noise Figure: -