PH3134-30S BJT

PH3134-30S PH3134-30S

PH3134-30S BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: PH3134-30S
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 350 W
  • Maximum Collector-Emitter Voltage: 65 V
  • Maximum Emitter-Base Voltage: 3 V
  • Maximum Collector Current: 3.6 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency: 3400 MHz
  • Forward Current Transfer Ratio (hFE Value): 7.5
  • Package: CERAMIC
  • Noise Figure: -