PH3135-20M BJT

PH3135-20M PH3135-20M

PH3135-20M BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: PH3135-20M
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 200 W
  • Maximum Collector-Emitter Voltage: 65 V
  • Maximum Emitter-Base Voltage: 3 V
  • Maximum Collector Current: 2.4 A
  • Maximum Operating Junction Temperature: 200 °C
  • Transition Frequency: 3500 MHz
  • Forward Current Transfer Ratio (hFE Value): 7.5
  • Package: CERAMIC
  • Noise Figure: -