PN100 BJT

PN100 PN100
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PN100 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: PN100
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.625 W
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 35 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 200 MHz
  • Forward Current Transfer Ratio (hFE Value): 40
  • Package: TO-92
  • Noise Figure: -

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