QS6Z5 BJT

QS6Z5 QS6Z5

QS6Z5 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: QS6Z5
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.9 W
  • SMD Transistor Code: Z05
  • Maximum Collector-Base Voltage: 50 V
  • Maximum Collector-Emitter Voltage: 50 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 1 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 360 MHz
  • Forward Current Transfer Ratio (hFE Value): 180
  • Package: TSMT6
  • Noise Figure: -

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