RT3A66M BJT

RT3A66M RT3A66M

RT3A66M BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: RT3A66M
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.2 W
  • SMD Transistor Code: AHE
  • Maximum Collector-Base Voltage: 160 V
  • Maximum Collector-Emitter Voltage: 150 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.1 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 100 MHz
  • Forward Current Transfer Ratio (hFE Value): 90
  • Collector Capacitance: 2.8 pF
  • Package: SOT-363
  • Noise Figure: -