RT3A77M BJT

RT3A77M RT3A77M

RT3A77M BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: RT3A77M
  • Material of Transistor: Si
  • Polarity: PNP
  • Maximum Collector Power Dissipation: 0.2 W
  • SMD Transistor Code: A77
  • Maximum Collector-Base Voltage: 60 V
  • Maximum Collector-Emitter Voltage: 60 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 0.5 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 200 MHz
  • Forward Current Transfer Ratio (hFE Value): 100
  • Collector Capacitance: 8 pF
  • Package: SOT-363
  • Noise Figure: -