RT3C66M BJT

RT3C66M RT3C66M
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RT3C66M BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: RT3C66M
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.2 W
  • SMD Transistor Code: CJE
  • Maximum Collector-Base Voltage: 180 V
  • Maximum Collector-Emitter Voltage: 160 V
  • Maximum Emitter-Base Voltage: 6 V
  • Maximum Collector Current: 0.1 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 100 MHz
  • Forward Current Transfer Ratio (hFE Value): 72
  • Collector Capacitance: 1.7 pF
  • Package: SOT-363
  • Noise Figure: -

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