RT3CXXM BJT

RT3CXXM RT3CXXM

RT3CXXM BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: RT3CXXM
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 0.15 W
  • SMD Transistor Code: CXX
  • Maximum Collector-Base Voltage: 50 V
  • Maximum Collector-Emitter Voltage: 20 V
  • Maximum Emitter-Base Voltage: 50 V
  • Maximum Collector Current: 0.6 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 40 MHz
  • Forward Current Transfer Ratio (hFE Value): 820
  • Collector Capacitance: 4 pF
  • Package: SOT-363
  • Noise Figure: -