S2000 BJT

S2000 S2000
TransistorData.com is not an official representative or the creator of the BJT S2000 Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official S2000 transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.

S2000 BJT Datasheet

  • Type of Transistor: BJT
  • Type Designator: S2000
  • Material of Transistor: Si
  • Polarity: NPN
  • Maximum Collector Power Dissipation: 125 W
  • Maximum Collector-Emitter Voltage: 1500 V
  • Maximum Emitter-Base Voltage: 5 V
  • Maximum Collector Current: 8 A
  • Maximum Operating Junction Temperature: 150 °C
  • Transition Frequency: 3 MHz
  • Forward Current Transfer Ratio (hFE Value): 2.2
  • Collector Capacitance: 125 pF
  • Package: TO247
  • Noise Figure: -

Top S2000 Equivalent Transistors