STD03N BJT
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STD03N BJT Datasheet
- Type of Transistor: BJT
- Type Designator: STD03N
- Material of Transistor: Si
- Polarity: NPN
- Maximum Collector Power Dissipation: 160 W
- Maximum Collector-Base Voltage: 160 V
- Maximum Collector-Emitter Voltage: 160 V
- Maximum Emitter-Base Voltage: 5 V
- Maximum Collector Current: 15 A
- Maximum Operating Junction Temperature: 150 °C
- Forward Current Transfer Ratio (hFE Value): 5000
- Package: TO-3P-5PIN
- Noise Figure: -